Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
نویسندگان
چکیده
The energy-transport models describe the flow of electrons through a semiconductor crystal, influenced by diffusive, electrical and thermal effects. They consist of the continuity equations for the mass and the energy, coupled to Poisson’s equation for the electric potential. These models can be derived from the semiconductor Boltzmann equation. This paper consists of two parts. The first part concerns with the modelling of the energy-transport system. The diffusion coefficients and the energy relaxation term are computed in terms of the electron density and temperature, under the assumptions of nondegenerate statistics and non-parabolic band diagrams. The equations can be rewritten in a drift-diffusion formulation which is used for the numerical discretization. In the second part, the stationary energy-transport equations are discretized using the exponential fitting mixed finite element method in one space dimension. Numerical simulations of a ballistic diode are performed.
منابع مشابه
Institute for Mathematical Physics Numerical Discretization of Energy{transport Models for Semiconductors with Non{parabolic Band Structure Numerical Discretization of Energy-transport Models for Semiconductors with Non-parabolic Band Structure
The energy-transport models describe the ow of electrons through a semiconductor crystal , innuenced by diiusive, electrical and thermal eeects. They consist of the continuity equations for the mass and the energy, coupled to Poisson's equation for the electric potential. These models can be derived from the semiconductor Boltzmann equation. This paper consists of two parts. The rst part concer...
متن کاملCarrier-carrier relaxation kinetics in quantum well semiconductor structures with nonparabolic energy bands
متن کامل
Energy Transport in Semiconductor Devices
The modeling, analysis, and numerical approximation of energy-transport models for semiconductor devices is reviewed. The derivation of the partial differential equations from the semiconductor Boltzmann equation is sketched. Furthermore, the main ideas for the analytical treatment of the equations, employing thermodynamic principles, are given. A new result is the proof of the weak sequential ...
متن کاملEffect of band structure discretization on the performance of full-band Monte Carlo simulation
Full-band Monte Carlo simulation offers a very accurate simulation technique, but is often limited by its high demand on computation time. The advantage of a numerical representation of the band structure over an analytical approximation is the accurate representation of the energy bands in the high energy regime. This allows accurate treatment of hot carrier effects in semiconductors. In this ...
متن کاملInvestigation of the Effect of Band Offset and Mobility of Organic/Inorganic HTM Layers on the Performance of Perovskite Solar Cells
Abstract: Perovskite solar cells have become an attractive subject in the solar energydevice area. During ten years of development, the energy conversion efficiency has beenimproved from 2.2% to more than 22%, and it still has a very good potential for furtherenhancement. In this paper, a numerical model of the perovskite solar cell with thestructure of glass/ FTO/ TiO2/...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- SIAM J. Scientific Computing
دوره 22 شماره
صفحات -
تاریخ انتشار 2000